Title :
Temperature dependence of the threshold current in 1.55-μm strain-compensated multiquantum-well distributed-feedback lasers
Author :
Bhattacharya, Pallab ; Yuan, Y. ; Brock, T. ; Caneau, C. ; Bhat, R.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
6/1/1998 12:00:00 AM
Abstract :
The temperature dependent threshold current and spectral output characteristics of InP-based 1.55-μm distributed-feedback (DFB) ridge InGaAsP MQW lasers made by metal-organic vapor phase epitaxial growth and regrowth, electron-beam lithography and grating formation, and reactive ion etching (RIE) have been characterized. Single-mode operation and T0 as high as 120 K at room temperature and below are measured. The high value of T0 is predominantly attributed to the tunnel injection design incorporated in the active region.
Keywords :
III-V semiconductors; distributed feedback lasers; electron beam lithography; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; quantum well lasers; semiconductor growth; sputter etching; tunnelling; vapour phase epitaxial growth; 1.55 mum; 120 K; DFB ridge InGaAsP MQW lasers; InGaAsP; InP; active region; distributed-feedback; electron-beam lithography; grating formation; metal-organic vapor phase epitaxial growth; reactive ion etching; room temperature; single-mode operation; spectral output characteristics; strain-compensated multiquantum-well distributed-feedback lasers; temperature dependence; temperature dependent threshold current; threshold current; tunnel injection design; Distributed feedback devices; Epitaxial growth; Fiber lasers; Laser tuning; Surface emitting lasers; Temperature dependence; Threshold current; Tunneling; Vertical cavity surface emitting lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
