Title :
Gain recovery of bulk semiconductor optical amplifiers
Author :
Girardin, F. ; Guekos, G. ; Houbavlis, A.
Author_Institution :
Inst. for Quantum Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
fDate :
6/1/1998 12:00:00 AM
Abstract :
The gain recovery time of 1.55-μm bulk semiconductor optical amplifiers (SOA´s) with lengths from 500 to 1500 μm has been measured with a continuous-wave (CW) probe in the time domain. It is shown to decrease with increasing length down to 60 ps for the longest SOA. This behavior is theoretically explained. A lower limit for the recovery time is observed and explained.
Keywords :
high-speed optical techniques; infrared sources; laser theory; laser transitions; optical testing; semiconductor device models; semiconductor device testing; semiconductor lasers; 1.55 mum; 500 to 1500 micron; CW probe; bulk semiconductor optical amplifier gain recovery; gain recovery time; time domain; Gain measurement; Nonlinear optics; Optical devices; Optical mixing; Optical pumping; Optical saturation; Probes; Semiconductor optical amplifiers; Stimulated emission; Time measurement;
Journal_Title :
Photonics Technology Letters, IEEE
