Title :
Peak temperature in high-power chips
Author_Institution :
Dept. of Mech. Eng., Texas Univ., Arlington, TX, USA
fDate :
4/1/1990 12:00:00 AM
Abstract :
Graphs to facilitate calculation of steady-state peak temperature at transistor sites on chips are presented. The effect of temperature-dependent thermal conductivity is included through application of the Kirchhoff transformation. The Green´s function solution method is used to evaluate the temperature field. The condition of uniform temperature on the bottom surface, which is in contact with the solder layer, is studied when cooling is by convection. This assists the linearization of working formulas for temperature-dependent thermal conductivity of materials such as Si, InP, and GaAs in the presence of convective cooling, as well as prescribed bottom surface temperature
Keywords :
Green´s function methods; convection; cooling; integrated circuit technology; packaging; power integrated circuits; temperature distribution; GaAs; Green´s function solution method; InP; Kirchhoff transformation; Si; bottom surface temperature; convection; cooling; graphs; high-power chips; solder layer; steady-state peak temperature; temperature field; temperature-dependent thermal conductivity; transistor sites; Biological materials; Conducting materials; Cooling; Eigenvalues and eigenfunctions; Gallium arsenide; Helium; Indium phosphide; Semiconductor devices; Temperature distribution; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
