Title :
SiGe-Si quantum-well electroabsorption modulators
Author :
Qasaimeh, O. ; Bhattacharya, Pallab
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
6/1/1998 12:00:00 AM
Abstract :
We have measured the characteristics of SiGe-Si quantum-well (QW) waveguide electroabsorption modulators grown by molecular beam epitaxy (MBE). The modulation is based on the decoupling of the electron wavefunction from the shallow wells for electrons with a small band-bending. A 100-μm-long modulator demonstrates contrast ratio and insertion loss of 1.43 and 28.5 dB, respectively.
Keywords :
Ge-Si alloys; electro-optical modulation; electroabsorption; molecular beam epitaxial growth; optical losses; optical waveguides; semiconductor growth; semiconductor quantum wells; silicon; 1.43 dB; 100 mum; 28.5 dB; MBE; SiGe-Si; SiGe-Si QW waveguide electroabsorption modulators; SiGe-Si quantum-well electroabsorption modulators; contrast ratio; electron wavefunction decoupling; insertion loss; molecular beam epitaxy; shallow wells; small band-bending; Absorption; Charge carrier processes; Electrons; Excitons; Germanium silicon alloys; Molecular beam epitaxial growth; Optical modulation; Photonic band gap; Quantum wells; Silicon germanium;
Journal_Title :
Photonics Technology Letters, IEEE
