Title :
Magnetization reversal behavior in cobalt rare-earth thin films
Author :
Malhotra, S.S. ; Shan, Z.S. ; Stafford, D.C. ; Lieu, S.H. ; Sellmyer, D.J.
Author_Institution :
Behlen Lab. of Phys., Nebraska Univ., Lincoln, NE, USA
fDate :
9/1/1996 12:00:00 AM
Abstract :
Cobalt Rare-Earth (CoR,R=Pr,Sm) thin films on a Cr underlayer have shown promise as future ultra high density magnetic recording media. The activation volume or the magnetic switching volume (V*) is an important consideration for thermal stability and media noise in high density recording media and V* can also provide information about the magnetization reversal behavior in these films. The magnetic switching volume was estimated for the CoPr films with thicknesses from 28 to 639 nm with a Cr underlayer of 80 nm annealed at 500°C. The measured switching volume ranges from 1.3 to 1.7×10-18 cm3 . We have also studied the Cr underlayer thickness and temperature effects on the switching volume for the CoSm films
Keywords :
cobalt alloys; ferromagnetic materials; magnetic thin films; magnetisation reversal; praseodymium alloys; samarium alloys; CoPr; CoSm; Cr underlayer; activation volume; annealing; cobalt rare-earth thin film; magnetic switching volume; magnetization reversal; media noise; thermal stability; ultra high density magnetic recording media; Annealing; Chromium; Cobalt; Magnetic films; Magnetic noise; Magnetic recording; Magnetic switching; Magnetization reversal; Thermal stability; Transistors;
Journal_Title :
Magnetics, IEEE Transactions on
