DocumentCode :
1388208
Title :
Perpendicular anisotropy in Co-Eu-EuS and Co-Eu-Tb-EuS exchange coupled sputtered films
Author :
Wang, Lien-Chang ; Gambino, Richard J.
Author_Institution :
Dept. of Mater. Sci. & Eng., State Univ. of New York, Stony Brook, NY, USA
Volume :
32
Issue :
5
fYear :
1996
fDate :
9/1/1996 12:00:00 AM
Firstpage :
4076
Lastpage :
4077
Abstract :
In an effort to achieve a high data storage density media, Co-Eu-EuS and Co-Eu-Tb-EuS thin films were prepared by RF sputtering. These samples show strong perpendicular anisotropy and high coercivity fields which are required for high data storage density MO media. The compensation temperatures were raised to room temperature making them more useful in MO applications. Exchange coupled EuS which has a giant Kerr rotation (6°) at short wavelength (1.8 eV) may help to raise the Kerr rotation at short wavelength in these films
Keywords :
Kerr magneto-optical effect; cobalt compounds; coercive force; europium compounds; exchange interactions (electron); ferrimagnetic materials; magnetic thin films; perpendicular magnetic anisotropy; sputtered coatings; terbium compounds; Co-Eu-EuS; Co-Eu-Tb-EuS; Kerr rotation; coercivity field; compensation temperature; data storage density; exchange coupled RF sputtered film; magneto-optic media; perpendicular anisotropy; Anisotropic magnetoresistance; Argon; Coercive force; Glass; Magnetic films; Perpendicular magnetic recording; Sputtering; Substrates; Temperature; X-ray diffraction;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.539268
Filename :
539268
Link To Document :
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