RF MEMS Fractal Capacitors With High Self-Resonant Frequencies

Author

Elshurafa, Amro M. ; Radwan, Ahmed G. ; Emira, Ahmed ; Salama, Khaled N.

Author_Institution

King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia

Volume

21

Issue

1

fYear

2012

Firstpage

10

Lastpage

12

Abstract

This letter demonstrates RF microelectromechanical systems (MEMS) fractal capacitors possessing the highest reported self-resonant frequencies (SRFs) in PolyMUMPS to date. Explicitly, measurement results show SRFs beyond 20 GHz. Furthermore, quality factors higher than 4 throughout a band of 1-15 GHz and reaching as high as 28 were achieved. Additional benefits that are readily attainable from implementing fractal capacitors in MEMS are discussed, including suppressing residual stress warping, eliminating the need for etching holes, and reducing parasitics. The latter benefits were acquired without any fabrication intervention.

Keywords

Q-factor; capacitors; internal stresses; micromechanical devices; radiofrequency integrated circuits; PolyMUMPS; RF MEMS fractal capacitors; bandwidth 1 GHz to 15 GHz; etching holes; microelectromechanical systems; quality factors; residual stress warping; self-resonant frequency; Capacitance; Capacitors; Etching; Fractals; Metals; Micromechanical devices; Shape; $Q$ ; Capacitors; RF microelectromechanical systems (MEMS); fractals; self-resonant frequency (SRF);

fLanguage

English

Journal_Title

Microelectromechanical Systems, Journal of

Publisher

ieee

ISSN

1057-7157

Type

jour

DOI

10.1109/JMEMS.2011.2175367

Filename

6095305