Title :
The Investigation of Electrothermal Characteristics of High-Voltage Lateral IGBT for ESD Protection
Author :
Qian, Qinsong ; Sun, Weifeng ; Wei, Shouming ; Liu, Siyang ; Longxing Shi
Author_Institution :
Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China
fDate :
3/1/2012 12:00:00 AM
Abstract :
In this paper, the detailed characterizations of the lateral insulated-gate bipolar transistor (LIGBT) for the electro- static discharge (ESD) protection of power ICs are presented. Compared with the conventional lateral DMOS with the same structure except for the anode doping type, the LIGBT shows lower triggering voltage, faster voltage-clamping speed, and much higher ESD robustness. Experimental results demonstrate that the LIGBT with runway layout achieves excellent thermal breakdown current of more than 10 A with 250-μm device width. The high ESD performance enables the LIGBT to be used as a promising ESD protection device in the power ICs.
Keywords :
electrostatic discharge; insulated gate bipolar transistors; power bipolar transistors; power integrated circuits; ESD protection device; anode doping type; electrostatic discharge; electrothermal characteristics; high-voltage lateral IGBT; lateral DMOS; lateral insulated-gate bipolar transistor; power IC; size 250 mum; thermal breakdown current; triggering voltage; voltage-clamping speed; Anodes; Clamps; Current density; Electric fields; Electrostatic discharges; Junctions; Logic gates; Electrostatic discharge (ESD); lateral DMOS (LDMOS) transistor; lateral insulated-gate bipolar transistor (LIGBT); power ICs;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2011.2178072
