DocumentCode :
1389184
Title :
A Low-Power BiCMOS 4-Element Phased Array Receiver for 76–84 GHz Radars and Communication Systems
Author :
Kim, Sang Young ; Rebeiz, Gabriel M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California San Diego, La Jolla, CA, USA
Volume :
47
Issue :
2
fYear :
2012
Firstpage :
359
Lastpage :
367
Abstract :
This paper presents a 76-84 GHz low-power 4- element phased array receiver built using a 0.13 μm BiCMOS process. The power consumption is reduced by using a single-ended design and alternating the amplifiers and phase shifter cells to result in a low noise figure at a low power consumption. A variable gain amplifier and an 11° trim bit are used to correct for the rms gain and phase errors at different operating frequencies. The phased array consumes 32 mW per channel and results in a gain of 10-19 dB at 76-84 GHz, a noise figure of 10.5 ±0.5 dB at 80 GHz and an rms gain and phase error <;0.8 dB and <;7.2 °, respectively, up to 81 GHz, and <;1.1 dB and 10.4° up to 84 GHz. The phased array also shows a channel to channel coupling of <; - 30 dB up to 84 GHz. To our knowledge, this work presents state-of-the-art on-chip performance at W-band frequencies.
Keywords :
BiCMOS integrated circuits; amplifiers; millimetre wave phase shifters; phased array radar; BiCMOS; W-band frequencies; communication system; frequency 76 GHz to 84 GHz; frequency 80 GHz; gain 10 dB to 19 dB; phase shifter cells; phased array receiver; radar; size 0.13 mum; variable gain amplifier; Arrays; Gain; Phase shifters; Power demand; Radar; Topology; Transistors; Millimeter-wave integrated circuits; phase shifters; phased arrays; silicon germanium;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2011.2170769
Filename :
6095350
Link To Document :
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