DocumentCode
13893
Title
180-nm CMOS Wideband Capacitor-Free Inductively Coupled Power Receiver and Charger
Author
Lazaro, Orlando ; Rincon-Mora, Gabriel A.
Author_Institution
Analog, Power & Energy IC Res., Georgia Tech, Atlanta, GA, USA
Volume
48
Issue
11
fYear
2013
fDate
Nov. 2013
Firstpage
2839
Lastpage
2849
Abstract
Wireless microsystems like biomedical implants and embedded sensors derive energy from tiny in-package sources that, unfortunately, exhaust easily, which means that operational life is short. Periodically coupling power wirelessly is one way of replenishing onboard batteries, except that small receiver coils suffer from low coupling factors kC and induce low electromotive-force voltages. Today, receivers store and resonate incoming energy between the receiving coil and an off-chip capacitor until the voltage rises sufficiently high for a diode-bridge rectifier to steer power into a battery. The capacitor, however, requires board space and constrains the source to a particular frequency. The 180-nm CMOS power receiver presented in this paper removes the diode bridge, which establishes a minimum voltage below which the system cannot derive power, so that neither tuning nor a resonating capacitor is necessary. Experimental measurements show that the system draws power from 30-mV signals when kC is 0.0046 and coil separation is 11.35 mm, and this threshold voltage only changes 13.6 mV across 100-150 kHz, which is a 27.1% lower threshold voltage that is 36 × less sensitive than its resonating counterpart. The peak efficiency of the receiver when rectifying to 1.2 V is 82% at 224 μW and 125 kHz and average efficiency is 76% for 90-386-mV coil voltages.
Keywords
CMOS integrated circuits; coupled circuits; microsensors; receivers; rectifiers; wireless sensor networks; CMOS power receiver; CMOS wideband capacitor-free inductively coupled power charger; CMOS wideband capacitor-free inductively coupled power receiver; coupling factors; efficiency 82 percent; frequency 100 kHz to 150 kHz; low-threshold rectifier; power 224 muW; receiver peak efficiency; size 180 nm; voltage 1.2 V; voltage 30 mV; voltage 90 mV to 386 mV; wireless microsystems; Batteries; Capacitors; Coils; Logic gates; Magnetic resonance; Receivers; Switches; Contactless charging; inductive power transmission; inductively coupling; low-threshold rectifier; wireless power transfer;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2013.2280053
Filename
6601737
Link To Document