• DocumentCode
    1389405
  • Title

    A Mechanism for Dependence of Refresh Time on Data Pattern in DRAM

  • Author

    Lee, Myoung Jin ; Park, Kun Woo

  • Author_Institution
    R&D Div., Hynix Semicond. Inc., Icheon, South Korea
  • Volume
    31
  • Issue
    2
  • fYear
    2010
  • Firstpage
    168
  • Lastpage
    170
  • Abstract
    We measured the refresh time (tREF) according to data patterns for several dynamic random access memory (DRAM) chips. The measured tREF depends on the cell data pattern; moreover, these have their own dependences, which differ for several DRAM chips. We analyzed these phenomena in terms of both refresh and offset measurements, and our novel result was that tREF dependence on data patterns is determined by both a cell leakage mechanism and an offset by sensing noise.
  • Keywords
    DRAM chips; pattern recognition; DRAM chips; cell leakage mechanism; data pattern; dynamic random access memory; refresh time; Bit-line sense amplifier (BLSA); cell leakage; data pattern; offset; refresh time (tREF); sensing noise;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2038243
  • Filename
    5393090
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1389405