Title :
A Mechanism for Dependence of Refresh Time on Data Pattern in DRAM
Author :
Lee, Myoung Jin ; Park, Kun Woo
Author_Institution :
R&D Div., Hynix Semicond. Inc., Icheon, South Korea
Abstract :
We measured the refresh time (tREF) according to data patterns for several dynamic random access memory (DRAM) chips. The measured tREF depends on the cell data pattern; moreover, these have their own dependences, which differ for several DRAM chips. We analyzed these phenomena in terms of both refresh and offset measurements, and our novel result was that tREF dependence on data patterns is determined by both a cell leakage mechanism and an offset by sensing noise.
Keywords :
DRAM chips; pattern recognition; DRAM chips; cell leakage mechanism; data pattern; dynamic random access memory; refresh time; Bit-line sense amplifier (BLSA); cell leakage; data pattern; offset; refresh time (tREF); sensing noise;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2038243
