Low-loss high-power static induction thyristors for complementary circuits

Two techniques are proposed to obtain low-loss high-power static induction thyristors (SIThys). A dual-sided proton-irradiation technique and a technique that combines anode shorting and proton irradiation both provide n-channel and p-channel SIThys with high blocking voltages and a good trade-off between switching times and forward voltage drops. In particular, dual-sided proton irradiation provides a SIThy with forward and reverse blocking voltage higher than 1 kV. An n-channel SIThy with an n-region thickness of 230 μm has shown a rise time of 0.24 μs, a storage time of 0.19 μs, a fall time of 0.08 μs, and a forward voltage drop of 3.0 V at an anode current of 50 A (125 A/cm²). The effect of the combined technique is much the same as that of the dual-sided proton irradiation. Using the dual-sided proton irradiation, a p-channel SIThy with a p-region thickness of 430 μm has shown a rise time of 0.5 μs, a storage time of 0.1 μs, a fall time of 0.3 μs, and a forward voltage drop of 6.0 V at an anode current of 4 A (110 A/cm²). Using the proposed techniques, a complementary high-power control circuit with low loss and switching frequency higher than a few hundred kilohertz can be realized