Title :
GaInAsP twin-stripe lasers with asymmetrical waveguide channels
Author :
Wolf, Th. ; Kappeler, F. ; Stegmüller, B. ; Amann, M.-C.
Author_Institution :
Siemans AG, Res. Lab., Munich, West Germany
fDate :
2/1/1988 12:00:00 AM
Abstract :
Design and lasing characteristics of λ=1.3 μm GaInAsP twin-stripe (TS) metal-clad ridge-waveguide lasers, with a varying degree of index guiding between the channels are reported. The TS devices operate stably in the TE polarised mode, even if under single-stripe injection TM polarisation is observed. Effective longitudinal mode selectivity has been obtained for the TS lasers with an effective index step in the range of 1×10-2 to 5×10-3 between the channels. This mode selectivity can be explained by assuming coupling of lateral modes of the twin waveguide structure via the common gain-medium
Keywords :
gallium arsenide; gallium compounds; indium compounds; laser transitions; optical waveguides; semiconductor junction lasers; 1.3 micron; GaInAsP; TE polarised mode; TM polarisation; asymmetrical waveguide channels; index guiding; longitudinal mode selectivity; metal-clad ridge-waveguide lasers; semiconductor; twin-stripe lasers;
Journal_Title :
Optoelectronics, IEE Proceedings J
