Title :
Structure and Magnetic Properties of Thin Permalloy Films Near the “Transcritical” State
Author :
Svalov, A.V. ; Aseguinolaza, I.R. ; Garcia-Arribas, A. ; Orue, I. ; Barandiaran, J.M. ; Alonso, J. ; Fernandez-Gubieda, Maria Luisa ; Kurlyandskaya, G.V.
Author_Institution :
Dept. de Electr. y Electron., Univ. del Pais Vasco (UPV/EHU), Bilbao, Spain
Abstract :
Various series of permalloy thin films were grown by dc-sputtering on Si (100) and glass substrates at room temperature and different argon pressure values using a Fe20 Ni80 target. The increase of argon pressure leads to a decrease of the Fe concentration in the films from 17 at.% to 15 at.%, an increase of the root mean square roughness of film surfaces, and a decrease of the sharpness of the crystalline texture of the samples. The increase of the film thickness leads to an increase of the coercive field. The transition to the "transcritical" state was observed at a critical thickness that decreases from 220 to 50 nm as the argon pressure in the chamber increases. This state was confirmed by the characteristic shapes of hysteresis loops, rotatable magnetic anisotropy, and the appearance of stripe domains.
Keywords :
Permalloy; coercive force; magnetic anisotropy; magnetic domains; magnetic hysteresis; magnetic thin films; sputter deposition; surface roughness; surface texture; Fe20Ni80; Si; SiO2; coercive field; crystalline texture; dc-sputtering; film growth; film surfaces; hysteresis loops; root mean square roughness; rotatable magnetic anisotropy; stripe domains; structural properties; temperature 293 K to 298 K; thin permalloy films; transcritical state; Argon; Glass; Iron; Magnetic films; Magnetic properties; Root mean square; Rough surfaces; Semiconductor thin films; Substrates; Temperature; Magnetic domains; magnetic force microscopy; permalloy films; perpendicular magnetic anisotropy;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2009.2032519