DocumentCode
1389763
Title
A vertical high voltage termination structure for high-resistivity silicon detectors
Author
Segal, J.D. ; Kenney, C.J. ; Aw, C.H. ; Parker, S.I. ; Vilkelis, G. ; Iwanczyk, J.S. ; Patt, B.E. ; Plummer, J.
Author_Institution
HPL Inc., Milpitas, CA, USA
Volume
45
Issue
3
fYear
1998
fDate
6/1/1998 12:00:00 AM
Firstpage
364
Lastpage
369
Abstract
A new high voltage diode termination structure has been developed for the backside junction of silicon detectors which require double-sided processing. The new structure consists of a deep vertical etch through the diode at the edge of the detector. It requires only one mask, and is extremely robust to scratches or other mechanical damage. The vertical termination has been successfully applied to an integrated pixel detector, where it increased yield. It has also been applied to an 8mm diameter cylindrical drift detector
Keywords
silicon radiation detectors; Si; Si detectors; backside junction; cylindrical drift detector; double-sided processing; high voltage termination structure; high-resistivity Si; high-resistivity Si detectors; integrated pixel detector; Detectors; Etching; Face detection; Integrated circuit technology; Medical simulation; Robustness; Semiconductor diodes; Semiconductor materials; Silicon; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.682409
Filename
682409
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