Imaging performance of single-element CdZnTe detectors for digital radiography

Author

Bertolucci, E. ; Chirco, P. ; Conti, M. ; Marcello, L. ; Rossi, M. ; Russo, P.

Author_Institution

Dipt. di Sci. Fisiche, Univ. Federico II, Napoli, Italy

Volume

45

Issue

3

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

406

Lastpage

412

Abstract

We measured the charge collection efficiency and energy resolution at 60 keV and 122 keV for single-element Cd_0.8Zn_0.2Te semiconductor detectors 2×10×10 mm³, irradiated transverse to the electric field, in view of their possible use for digital radiography. Charge collection efficiency, energy resolution and charge collection time have been measured as a function of the bias voltage. The detector´s imaging performance was evaluated, using a scanning procedure, by measurements (at 60 keV) of the line spread function and edge response function of the imaging system; metallic test objects and bone tissue were imaged. Image contrast values as low as C=10% were obtained for a minimum 5:1 S.N.R

Keywords

diagnostic radiography; semiconductor counters; 122 keV; 60 keV; Cd_0.8Zn_0.2Te; Cd_0.8Zn_0.2Te detectors; CdZnTe detectors; bias voltage; bone tissue; charge collection efficiency; charge collection time; digital radiography; edge response function; energy resolution; image contrast; line spread function; metal; Charge measurement; Current measurement; Detectors; Electric variables measurement; Energy measurement; Energy resolution; Image edge detection; Radiography; Tellurium; Zinc;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.682417

Filename

682417