Characteristics of GaAs/AlGaAs-doped channel MISFET´s at cryogenic temperatures

Author

Laskar, J. ; Kolodzey, James ; Ketterson, A.A. ; Adesida, Ilesanmi ; Cho, Alfred Y.

Author_Institution

Center for Compound Semicond. Microelectron., Illinois Univ., Urbana, IL, USA

Volume

11

Issue

7

fYear

1990

fDate

7/1/1990 12:00:00 AM

Firstpage

300

Lastpage

302

Abstract

High-frequency measurements at cryogenic temperatures to 125 K of 0.3- mu m gate length GaAs-Al/sub 0.3/Ga/sub 0.7/As metal-insulator-semiconductor field-effect transistors (MISFETs) with a doped channel are discussed. Experimental results demonstrate significant improvement in performance including an increase in the maximum frequency of oscillation from 70 to 81 GHz and an increase in the unity current gain cutoff frequency from 46 to 57 GHz. Independently determined decreases in electron mobility and increases in electron velocity under similar conditions lead to the conclusion that carrier velocity and not mobility controls transport in these devices. These results show the high-speed potential of doped channel MISFETs at both room temperature and cryogenic temperatures.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; insulated gate field effect transistors; solid-state microwave devices; 0.3 micron; 125 K; 46 to 81 GHz; EHF; GaAs-Al/sub 0.3/Ga/sub 0.7/As; MISFETs; characteristics; cryogenic temperatures; cutoff frequency; doped channel; electron mobility; electron velocity; improvement in performance; maximum frequency of oscillation; room temperature; semiconductors; submicron gates; Cryogenics; Cutoff frequency; Electron mobility; FETs; Gallium arsenide; Length measurement; MISFETs; Metal-insulator structures; Performance gain; Temperature measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.56481

Filename

56481