Title :
Ultralow-noise W-band pseudomorphic InGaAs HEMT´s
Author :
Tan, K.L. ; Dia, R.M. ; Streit, Dwight C. ; Han, A.C. ; Trinh, Tien Q. ; Velebir, J.R. ; Liu, P.H. ; Lin, Tzuenshyan ; Yen, H.C. ; Sholley, M. ; Shaw, L.
Author_Institution :
TRW, Redondo Beach, CA, USA
fDate :
7/1/1990 12:00:00 AM
Abstract :
Low-noise planar doped pseudomorphic (PM) InGaAs high-electron-mobility transistors (HEMTs) with a gate length of 0.1 mu m for W-band operation are discussed. These devices feature a multiple-finger layout with air bridges interconnecting the sources to reduce gate resistance. The device exhibits a minimum noise figure of 2.5 dB with an associated gain of 4.7 dB at 92.5 GHz. This result demonstrates the feasibility of using PM InGaAs HEMTs for W-band low-noise receivers without the need for using lattice-matched InP HEMTs.<>
Keywords :
III-V semiconductors; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.1 micron; 2.5 dB; 4.7 dB; 92.5 GHz; EHF; W-band; air bridges; gain; gate length; low-noise receivers; multiple-finger layout; noise figure; planar doped; semiconductors; Carrier confinement; Design optimization; Electron mobility; Frequency; Gain; Gallium arsenide; HEMTs; Indium gallium arsenide; Millimeter wave communication; Noise figure;
Journal_Title :
Electron Device Letters, IEEE
