Performances of a silicon drift chamber as fast scintillator photodetector for gamma-ray spectroscopy

Author

Fiorini, C. ; Perotti, F. ; Labanti, C.

Author_Institution

Dipartimento di Elettronica, Politecnico di Milano, Italy

Volume

45

Issue

3

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

483

Lastpage

486

Abstract

The performances of a Silicon Drift Chamber (SDC), having a diameter of 3 mm, as scintillation light photodetector have been experimentally evaluated on a prototype of γ-ray detector employing a GSO crystal of similar cross-section. This detector presents a minimum energy threshold of about 50 keV at room temperature (20°C) or 25 keV at 0°C. The measured energy resolution at room temperature is 22.65% and 8.73% FWHM at 122 keV and 662 keV respectively. These performances were obtained by using a shaping time of 0.5 μs which allows to operate at high γ-ray interaction rate. The effect of the SDC drift-time on the detector gain has been also evaluated

Keywords

drift chambers; gadolinium compounds; silicon radiation detectors; solid scintillation detectors; GSO crystal; Gd₂(SiO)₄O:Ce; Si; detector gain; drift-time; energy resolution; fast scintillator photodetector; gamma-ray spectroscopy; high γ-ray interaction rate; shaping time; silicon drift chamber; Energy measurement; Energy resolution; Gamma ray detection; Gamma ray detectors; Performance evaluation; Photodetectors; Prototypes; Silicon; Solid scintillation detectors; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.682431

Filename

682431