DocumentCode :
1389983
Title :
Surface polishing of GSO scintillator using chemical process
Author :
Kurashige, K. ; Kurata, Y. ; Ishibashi, H. ; Susa, K.
Author_Institution :
Hitachi Chem. Co. Ltd., Ibaraki, Japan
Volume :
45
Issue :
3
fYear :
1998
fDate :
6/1/1998 12:00:00 AM
Firstpage :
522
Lastpage :
524
Abstract :
A Ce doped Gd2SiO5, (GSO) single crystal is an excellent scintillator featuring a large light output, a short decay constant and a high absorption coefficient. It was shown in our previous studies that the surfaces of the scintillator should be polished to get scintillation light output efficiently especially for long and narrow scintillators. Therefore, we newly developed a chemical process to polish the GSO crystal. The surface of the GSO crystal was found to become smooth when it was etched using anhydrous orthophosphoric acid at 150-300°C. The process was also proved to be applicable to large size crystal such as 20×20×200 mm3 preventing thermal shock crack. An improvement in the scintillator efficiency was confirmed using the chemical polishing process
Keywords :
cerium; gadolinium compounds; polishing; solid scintillation detectors; 150 to 300 C; 20 mm; 200 mm; GSO:Ce; Gd2SiO5:Ce; anhydrous orthophosphoric acid; chemical process; scintillator; single crystal; surface polishing; Absorption; Chemical processes; Energy resolution; Etching; Nuclear physics; Positron emission tomography; Rough surfaces; Surface roughness; Testing; Wavelength measurement;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.682440
Filename :
682440
Link To Document :
بازگشت