Title :
Development of a silicon carbide radiation detector
Author :
Ruddy, F.H. ; Dulloo, A.R. ; Seidel, J.G. ; Seshadri, S. ; Rowland, L.B.
Author_Institution :
Westinghouse Sci. & Technol. Center, Pittsburgh, PA, USA
fDate :
6/1/1998 12:00:00 AM
Abstract :
The radiation detection properties of semiconductor detectors made of 4H silicon carbide were evaluated. Both Schottky and p-n junction devices were tested. Exposure to alpha particles from a 238Pu source led to robust signals from the detectors. The resolution of the Schottky SiC detector was 5.8% (FWHM) at an energy of 294 keV, while that of the p-n junction was 6.6% (FWHM) at 260 keV. No effect of temperature in the range of 22 to 89°C was observed on the characteristics of the 238Pu alpha-induced signal from the SiC detector. In addition, testing in a gamma field of 10,000 rad-Si h -1 showed that the alpha-induced signal was separable from the gamma signal
Keywords :
Schottky barriers; alpha-particle detection; p-n junctions; semiconductor counters; silicon compounds; wide band gap semiconductors; 22 to 89 C; 4H-SiC; 238Pu source; Pu; Schottky devices; SiC; alpha particles exposure; gamma field; p-n junction devices; radiation detection properties; radiation detector; resolution; semiconductor detectors; Alpha particles; Energy resolution; P-n junctions; Radiation detectors; Robustness; Semiconductor radiation detectors; Signal detection; Silicon carbide; Silicon radiation detectors; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
