DocumentCode
1390063
Title
Comparative study of silicon detectors
Author
Allier, C.P. ; Valk, H. ; Huizenga, J. ; Bom, V.R. ; Hollander, R.W. ; van Eijk, C.W.E.
Author_Institution
Interfacultair Reactor Inst., Delft Univ. of Technol., Netherlands
Volume
45
Issue
3
fYear
1998
fDate
6/1/1998 12:00:00 AM
Firstpage
576
Lastpage
580
Abstract
We studied three different types of silicon sensors: PIN diodes, circular drift detectors, both made at the Delft University of Technology (DUT), and Hamamatsu S5345 avalanche photodiodes. Measurements have been carried out in the same optimized experimental setup, both at room temperature and at low temperatures. Comparison is made for direct X-ray detection and CsI:Tl scintillation light readout
Keywords
X-ray detection; avalanche photodiodes; p-i-n diodes; silicon radiation detectors; 293 K; CsI:Tl; Hamamatsu S5345 avalanche photodiode; PIN diodes; Si; Si detectors; X-ray detection; circular drift detectors; low temperature; room temperature; Avalanche photodiodes; Capacitance; Energy resolution; Leakage current; Noise shaping; Preamplifiers; Silicon; Solid scintillation detectors; X-ray detection; X-ray detectors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.682451
Filename
682451
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