Title :
Comparative study of silicon detectors
Author :
Allier, C.P. ; Valk, H. ; Huizenga, J. ; Bom, V.R. ; Hollander, R.W. ; van Eijk, C.W.E.
Author_Institution :
Interfacultair Reactor Inst., Delft Univ. of Technol., Netherlands
fDate :
6/1/1998 12:00:00 AM
Abstract :
We studied three different types of silicon sensors: PIN diodes, circular drift detectors, both made at the Delft University of Technology (DUT), and Hamamatsu S5345 avalanche photodiodes. Measurements have been carried out in the same optimized experimental setup, both at room temperature and at low temperatures. Comparison is made for direct X-ray detection and CsI:Tl scintillation light readout
Keywords :
X-ray detection; avalanche photodiodes; p-i-n diodes; silicon radiation detectors; 293 K; CsI:Tl; Hamamatsu S5345 avalanche photodiode; PIN diodes; Si; Si detectors; X-ray detection; circular drift detectors; low temperature; room temperature; Avalanche photodiodes; Capacitance; Energy resolution; Leakage current; Noise shaping; Preamplifiers; Silicon; Solid scintillation detectors; X-ray detection; X-ray detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
