Title :
Micro-inhomogeneity effects and radiation damage in semi-insulating GaAs radiation detectors
Author :
Bates, R. ; Didziulis, R. ; Kazukauskas, V. ; Shea, V.O. ; Raine, C. ; Rinkevioius, V. ; Smith, K.M. ; Storasta, J. ; Vaitkus, J.
Author_Institution :
Dept. of Phys. & Astron., Glasgow Univ., UK
fDate :
6/1/1998 12:00:00 AM
Abstract :
Thermally-stimulated current (TSC) measurements and a detailed analysis of current-voltage (I-V) characteristics have been made on semi-insulating GaAs (SI-GaAs) Schottky diode particle detectors, fabricated on substrates from several suppliers, before and after irradiation with 24 GeV protons and 300 MeV pions. The analysis of I-V characteristics allows the determination of the barrier height and bulk resistance in detectors. Changes observed in I-V characteristics and TSC spectra after irradiation are described and a dislocation-net model of radiation-damaged devices is proposed
Keywords :
Schottky diodes; dislocations; gallium arsenide; meson effects; proton effects; semiconductor counters; thermally stimulated currents; 24 GeV; 300 MeV; GaAs; I-V characteristics; Schottky diode; barrier height; bulk resistance; current-voltage characteristics; dislocation-net model; micro-inhomogeneity; pion irradiation; proton irradiation; radiation-damage; semi-insulating GaAs detectors; thermally-stimulated current; Electrical resistance measurement; Extraterrestrial measurements; Gallium arsenide; Laser excitation; Physics; Protons; Radiation detectors; Schottky diodes; Temperature; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
