Title :
A comparative study of heavily irradiated silicon and non irradiated SI LEC GaAs detectors
Author :
Biggeri, U. ; Borchi, E. ; Bruzzi, M. ; Eremin, V. ; Leroy, C. ; Li, Z. ; Menichelli, D. ; Pirollo, S. ; Sciortino, S. ; Verbitskaya, E.
Author_Institution :
Dept. di Energetica, INFN. Firenze, Italy
fDate :
6/1/1998 12:00:00 AM
Abstract :
Silicon p+n junctions irradiated with neutron and proton fluences in the range 5×1011-4×1015 cm-2 and non-irradiated SI LEC GaAs Schottky barriers have been analyzed. In silicon the concentration Nt of the main radiation-induced deep traps (Et≈0.44-0.54 eV) is found to increase as Nt α f achieving values up to 5×1015 cm-3 and a mobility saturation at 100 cm2/Vs has been observed at the highest fluences. A quantitative comparison between heavily irradiated silicon and non-irradiated GaAs evidenced similar charge collection efficiencies, a quasi-intrinsic bulk, and similar concentrations of deep defects. On this basis, a unique model, correlating the lattice disorder and the detector performance, is suggested
Keywords :
Schottky barriers; deep levels; gallium arsenide; neutron detection; p-n junctions; proton detection; semiconductor counters; silicon radiation detectors; GaAs; GaAs LEC detectors; Schottky barriers; Si; charge collection efficiencies; detector performance; heavily irradiated Si detector; lattice disorder; mobility saturation; neutron fluences; p+n junctions; proton fluences; radiation-induced deep traps; Current measurement; Detectors; Gallium arsenide; Lattices; Neutrons; Performance analysis; Protons; Schottky barriers; Silicon; Transient analysis;
Journal_Title :
Nuclear Science, IEEE Transactions on
