TCAD-based analysis of radiation-hardness in silicon detectors

Author

Passeri, D. ; Baroncini, M. ; Ciampolini, P. ; Bilei, G.M. ; Santocchia, A. ; Checcucci, B. ; Fiandrini, E.

Author_Institution

Istituto di Elettronica, Perugia Univ., Italy

Volume

45

Issue

3

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

602

Lastpage

608

Abstract

The application of a general-purpose device-simulator to the analysis of silicon microstrip radiation detector is described. Physical models include charge-collection dynamics, as well as radiation-induced deep-level recombination centers. Realistic description of multiple-strip devices can be accounted for. To allow for validation of the analysis tool, actual detectors have been measured, before and-after being irradiated with neutrons. Simulation predictions agree well with experiments. Limitations of the adopted model are discussed, with reference to simulation-based comparison with higher-order models

Keywords

CAD; deep levels; digital simulation; high energy physics instrumentation computing; position sensitive particle detectors; radiation hardening; silicon radiation detectors; Si; TCAD-based analysis; charge-collection dynamics; general-purpose device-simulator; microstrip radiation detector; multiple-strip devices; radiation-hardness; radiation-induced deep-level recombination centers; Analytical models; Design automation; Design optimization; Microstrip; Neutrons; Prototypes; Radiation detectors; Silicon radiation detectors; Solid modeling; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.682456

Filename

682456