DocumentCode :
1390228
Title :
A Synthesis-Based Bandwidth Enhancement Technique for CMOS Amplifiers: Theory and Design
Author :
Pi, Deyi ; Chun, Byung-Kwan ; Heydari, Payam
Author_Institution :
Broadcom Corp., Irvine, CA, USA
Volume :
46
Issue :
2
fYear :
2011
Firstpage :
392
Lastpage :
402
Abstract :
A synthesis-based bandwidth enhancement technique for CMOS amplifiers/buffers is presented. It achieves bandwidth-enhancement ratio (BWER) of 4.84, close to a proven theoretical upper limit of 4.93 for passive network with balanced capacitive loads. By employing a step-by-step design methodology, the proposed technique can be applied to any load condition, which is characterized by the ratio between the load capacitance and the output capacitance of the transconductor cell. Time-domain behavior of the proposed technique is examined. Two prototype amplifier/buffer circuits are designed using lower order passive networks to save chip area and circuit complexity. The test chips are fabricated in a 0.18 μm CMOS process, and measurements verify the frequency- and time-domain analyses. The amplifier provides 18.5 dB gain and 28 GHz bandwidth, while consuming 52 mW power from a 1.8 V supply.
Keywords :
CMOS analogue integrated circuits; buffer circuits; circuit complexity; passive networks; time-frequency analysis; wideband amplifiers; BWER; CMOS amplifier-buffer circuit; CMOS process; bandwidth 28 GHz; circuit complexity; frequency-and time-domain analysis; gain 18.5 dB; load condition; lower order passive networks; power 52 mW; size 0.18 mum; step-by-step design methodology; synthesis-based bandwidth enhancement ratio technique; transconductor cell; voltage 1.8 V; Bandwidth enhancement; CMOS amplifier; passive network; peaking; wide-band amplifier;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2010.2088290
Filename :
5648366
Link To Document :
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