• DocumentCode
    1390277
  • Title

    HERA-B detectors with p-spray isolation on the n-side; unirradiated results

  • Author

    Schjølberg-Henriksen, Kari ; Westgaard, Trond ; Avset, Berit Sundby

  • Author_Institution
    Dept. of Electron. & Cybern., SINTEF, Oslo, Norway
  • Volume
    47
  • Issue
    4
  • fYear
    2000
  • fDate
    8/1/2000 12:00:00 AM
  • Firstpage
    1371
  • Lastpage
    1374
  • Abstract
    p-spray isolation of double-sided detectors is investigated by computer simulations and measurements on full-size detector prototypes. Simulations showed that a B p-spray implant doses 4·1012 , 6·1012, and 8·1012 cm-2 and implant energy 60 keV would yield breakdown voltages above 200 V for unirradiated detectors with oxide charge 2·1011 cm-2. The simulations showed that the breakdown voltage decreases with increasing p-spray dose. According to the computer simulations, the detectors should perform equally well after irradiation giving an oxide charge of 1·1012 cm-2 . HERA-B strip detectors with p-spray isolation were manufactured, using the three simulated doses. The average breakdown voltages and standard deviations were 167±31 V for the 4·1012 cm-2 dose, 151±16 V for the 6·1012 cm-2 dose, and 127±13 V for the 8·1012 cm-2 dose. The measured decrease in breakdown voltage is in good agreement with the computer simulations
  • Keywords
    digital simulation; dosimetry; silicon radiation detectors; 127 V; 151 V; 167 V; 200 V; B p-spray implant dose; HERA-B; Si; Si microstrip detector; breakdown voltage; computer simulation; double-sided detectors; p-spray dose; p-spray isolation; Boron; Computational modeling; Computer simulation; Cybernetics; Detectors; Implants; Silicon; Spraying; Strips; Virtual prototyping;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.872980
  • Filename
    872980