A new silicon detector for microdosimetry applications in proton therapy

Author

Rosenfeld, A.B. ; Bradley, P.D. ; Cornelius, I. ; Kaplan, G.I. ; Allen, B.J. ; Flanz, J.B. ; Goitein, M. ; Van Meerbeeck, A. ; Schubert, J. ; Bailey, J. ; Takada, Y. ; Maruhashi, A. ; Hayakawa, Y.

Author_Institution

Dept. of Eng. Phys., Wollongong Univ., NSW, Australia

Volume

47

Issue

4

fYear

2000

fDate

8/1/2000 12:00:00 AM

Firstpage

1386

Lastpage

1394

Abstract

A silicon-on-insulator diode array with a sensitive depth of 10 microns has been developed for microdosimetry in proton therapy. The detector was coupled to a radiation-hard charge sensitive amplifier with the probe assembly capable of measuring an LET down to 1.2 keV/μm. The device has been successfully tested at two proton therapy centers. The 230 MeV Northeastern Proton Therapy Center, Boston and the 250 MeV Proton Medical Research Center at Tsukuba, Japan. The device offers much improved spatial resolution compared with a proportional gas counter particularly in the critical high dose region around the proton Bragg peak. Due to its small cross-sectional area (0.04 cm²) measurements may also be made in facilities with short high intensity beams

Keywords

dosimetry; radiation therapy; silicon radiation detectors; 10 micron; 230 MeV; 250 MeV; Si; Si detector; Si-on-insulator diode array; charge sensitive amplifier; microdosimetry; proton Bragg peak; proton therapy; spatial resolution; Assembly; Charge measurement; Current measurement; Diodes; Medical treatment; Probes; Protons; Radiation detectors; Silicon on insulator technology; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.872983

Filename

872983