Embedded front-end for charge amplifier configuration with sub-threshold MOSFET continuous reset

Author

Guazzoni, C. ; Sampietro, M. ; Fazzi, A. ; Lechner, P.

Author_Institution

Dipt. di Elettronica e Inf., Politecnico di Milano, Italy

Volume

47

Issue

4

fYear

2000

fDate

8/1/2000 12:00:00 AM

Firstpage

1442

Lastpage

1446

Abstract

The paper reports the considerations necessary to design state of the art front-end electronic devices integrated on silicon X-ray detectors to perform functional charge amplification. In particular it concentrates on the characteristics of a MOSFET feedback device operated in subthreshold mode to perform a continuous reset of the feedback capacitance with minimum added noise and maximum linearity. Details of the external microelectronic circuitry that complements the front-end devices are also given. The designed two-chip system aims to reach very high stability in charge-to-voltage conversion and to fulfil the requirements of the most advanced X-ray spectroscopy experiments

Keywords

MOSFET; nuclear electronics; pulse amplifiers; MOSFET feedback device; charge amplifier; charge-to-voltage conversion; front-end; functional charge amplification; Capacitance; Event detection; Feedback; MOSFET circuits; Optical amplifiers; Radiation detectors; Semiconductor device noise; Semiconductor radiation detectors; Silicon radiation detectors; Spectroscopy;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.872993

Filename

872993