Title :
Shallow level analysis in irradiated silicon
Author :
Borchi, E. ; Bruzzi, M. ; Li, Z. ; Pirollo, S.
Author_Institution :
Dipt. di Energetica, Firenze, Italy
fDate :
8/1/2000 12:00:00 AM
Abstract :
Silicon p+/n/n+ junctions with nominal starting resistivity of 4-6 kΩcm have been irradiated with a 1 MeV neutron-equivalent fluence up to 4·1014 cm-2. In order to investigate the changes in the shallow level concentrations induced by irradiation, low temperature Thermally Stimulated Current measurements have been performed. For fluences over 1013 cm-2 a phosphorous removal is observed, probably due to the formation of the vacancy-phosphorous complex
Keywords :
defect states; elemental semiconductors; impurity states; impurity-vacancy interactions; interface states; neutron effects; p-n junctions; phosphorus; silicon; thermally stimulated currents; 1 MeV; 4 to 6 kohmcm; Si:P; irradiated silicon; low temperature thermally stimulated current measurements; neutron-equivalent fluence; phosphorus removal; resistivity; shallow level analysis; shallow level concentrations; silicon p+/n/n+ junctions; vacancy-phosphorus complex; Boron; Conductivity; Current measurement; Lattices; Performance evaluation; Silicon; Space charge; Temperature distribution; Temperature sensors; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
