Title :
A self-aligned EPROM structure with superior data retention
Author :
Manos, Pete ; Hart, Chuck
Author_Institution :
Motorola Inc., Austin, TX, USA
fDate :
7/1/1990 12:00:00 AM
Abstract :
A structure that exhibits superior data retention, compared to the conventional erasable programmable read-only memory (EPROM) cell, while still using phosphosilicate glass (PSG) passivation, is described. The nitrided self-aligned MOS (NIT-SAMOS) employs a thin layer of low-pressure chemical vapor deposition (LPCVD) nitride between the double-poly-gate structure and the poly-metal isolation dielectric, to reduce the possibility of contamination of the floating-gate area. Comparisons are made of EPROM data retention lifetimes, programmability, and UV erasability, and n- and p-channel device parameters.<>
Keywords :
MOS integrated circuits; PROM; chemical vapour deposition; integrated circuit technology; integrated memory circuits; passivation; phosphosilicate glasses; silicon compounds; NIT-SAMOS; P2O5-SiO2; PSG; UV erasability; data retention lifetimes; double-poly-gate structure; erasable programmable read-only memory; floating-gate; n-channel device parameters; nitridation; nitrided self-aligned MOS; p-channel device parameters; phosphosilicate glass; poly-metal isolation dielectric; programmability; self-aligned EPROM structure; superior data retention; Dielectric losses; EPROM; Glass; Hermetic seals; Lead compounds; Moisture; Packaging; Passivation; Research and development; Transistors;
Journal_Title :
Electron Device Letters, IEEE
