Modelling and fabrication of Geiger mode avalanche photodiodes

Author

Kindt, W.J. ; van Zeijl, H.W.

Author_Institution

Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands

Volume

45

Issue

3

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

715

Lastpage

719

Abstract

As a first assessment for the fabrication of Geiger mode avalanche photodiode arrays, single pixel devices have been made. A CMOS compatible technology is used to allow the future integration of pixels in an array with readout electronics. A model for afterpulsing is presented that relates the afterpulsing probability to the concentration and capture cross section of the traps in the depletion layer. The bias voltage and temperature dependence of the dark count rate is explained by a trap assisted tunneling model. Measured results on fabricated devices are compared with theory

Keywords

CMOS integrated circuits; Geiger counters; avalanche photodiodes; nuclear electronics; CMOS compatible technology; Geiger mode avalanche photodiodes; afterpulsing probability; bias voltage; dark count rate; depletion layer; readout electronics; single pixel devices; temperature dependence; trap assisted tunneling model; Avalanche photodiodes; CMOS technology; Cathodes; Diodes; Electric breakdown; Electron traps; Extraterrestrial measurements; Fabrication; Optical sensors; Readout electronics;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.682621

Filename

682621