Title :
Modelling and fabrication of Geiger mode avalanche photodiodes
Author :
Kindt, W.J. ; van Zeijl, H.W.
Author_Institution :
Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
fDate :
6/1/1998 12:00:00 AM
Abstract :
As a first assessment for the fabrication of Geiger mode avalanche photodiode arrays, single pixel devices have been made. A CMOS compatible technology is used to allow the future integration of pixels in an array with readout electronics. A model for afterpulsing is presented that relates the afterpulsing probability to the concentration and capture cross section of the traps in the depletion layer. The bias voltage and temperature dependence of the dark count rate is explained by a trap assisted tunneling model. Measured results on fabricated devices are compared with theory
Keywords :
CMOS integrated circuits; Geiger counters; avalanche photodiodes; nuclear electronics; CMOS compatible technology; Geiger mode avalanche photodiodes; afterpulsing probability; bias voltage; dark count rate; depletion layer; readout electronics; single pixel devices; temperature dependence; trap assisted tunneling model; Avalanche photodiodes; CMOS technology; Cathodes; Diodes; Electric breakdown; Electron traps; Extraterrestrial measurements; Fabrication; Optical sensors; Readout electronics;
Journal_Title :
Nuclear Science, IEEE Transactions on
