• DocumentCode
    1390960
  • Title

    Postsilicon Adaptation for Low-Power SRAM under Process Variation

  • Author

    Cho, Minki ; Schlessman, Jason ; Mahmoodi, Hamid ; Wolf, Marilyn ; Mukhopadhyay, Saibal

  • Author_Institution
    Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    27
  • Issue
    6
  • fYear
    2010
  • Firstpage
    26
  • Lastpage
    35
  • Abstract
    Due to the high density requirement for embedded memories, such memories are highly vulnerable to process variation-induced failures. A conservative design approach can largely affect memory density and access performance. This article analyzes variation effects in SRAM and presents low-cost, adaptive postsilicon repair mechanisms.
  • Keywords
    SRAM chips; elemental semiconductors; low-power electronics; silicon; Si; conservative design approach; embedded memories; high density requirement; low-cost adaptive postsilicon repair mechanisms; low-power SRAM; memory density; postsilicon adaptation; process variation; process variation-induced failures; variation effects; Accuracy; Arrays; Image quality; MOS devices; Maintenance engineering; Random access memory; Transistors; SRAM; design and test; image processing; low-power; multimedia; postsilicon adaptation; process variations; reconfiguration;
  • fLanguage
    English
  • Journal_Title
    Design & Test of Computers, IEEE
  • Publisher
    ieee
  • ISSN
    0740-7475
  • Type

    jour

  • DOI
    10.1109/MDT.2010.137
  • Filename
    5648493
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1390960