Title :
Postsilicon Adaptation for Low-Power SRAM under Process Variation
Author :
Cho, Minki ; Schlessman, Jason ; Mahmoodi, Hamid ; Wolf, Marilyn ; Mukhopadhyay, Saibal
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Due to the high density requirement for embedded memories, such memories are highly vulnerable to process variation-induced failures. A conservative design approach can largely affect memory density and access performance. This article analyzes variation effects in SRAM and presents low-cost, adaptive postsilicon repair mechanisms.
Keywords :
SRAM chips; elemental semiconductors; low-power electronics; silicon; Si; conservative design approach; embedded memories; high density requirement; low-cost adaptive postsilicon repair mechanisms; low-power SRAM; memory density; postsilicon adaptation; process variation; process variation-induced failures; variation effects; Accuracy; Arrays; Image quality; MOS devices; Maintenance engineering; Random access memory; Transistors; SRAM; design and test; image processing; low-power; multimedia; postsilicon adaptation; process variations; reconfiguration;
Journal_Title :
Design & Test of Computers, IEEE
DOI :
10.1109/MDT.2010.137
