Title :
Defect-free silicon film on SiO2 formed by zone melting recrystallization with high scanning speed
Author :
Liu, Lianjun ; Tsien, Pei-Hsin ; Li, Zhijian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fDate :
4/1/1990 12:00:00 AM
Abstract :
The recrystallization of polysilicon films on silicon dioxide at high scanning speed, in the range of 5≈15 mm/s, with an RF-induced graphite strip heater system is discussed. The films are in (100) orientation and contain subgrain boundaries (SGBs). Heat-sink and valley structures have been used to localize these SGBs. Defect-free silicon films have been obtained with good uniformity and reproducibility. The differences between the results obtained with fast scanning and the conventional slow scanning is analyzed. n-channel and p-channel MOSFETs have been fabricated in the recrystallized silicon film to characterize electrical properties such as mobilities and leakage currents, and they show very good characteristics
Keywords :
carrier mobility; elemental semiconductors; insulated gate field effect transistors; leakage currents; recrystallisation; semiconductor technology; semiconductor thin films; semiconductor-insulator boundaries; silicon; silicon compounds; zone melting; (100) orientation; 5 to 15 mm/s; RF-induced graphite strip heater system; Si-SiO2; SiO2; defect free films; electrical properties; heat sink structures; high scanning speed; leakage currents; mobilities; n-channel MOSFET; p-channel MOSFETs; polysilicon films; subgrain boundaries; valley structures; zone melting recrystallization; High speed integrated circuits; Insulation; Leakage current; Oxidation; Reproducibility of results; Semiconductor films; Silicon compounds; Strips; Substrates; Switching circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
