Title :
High dynamic CMOS preamplifiers for QW diodes
Author :
Petri, C. ; Rocchi, S. ; Vignoli, V.
Author_Institution :
Dipt. di Ingegneria dell´´Inf., Siena Univ., Italy
fDate :
4/30/1998 12:00:00 AM
Abstract :
A CMOS transimpedance amplifier was designed as a front end preamplifier for electro-optic quantum well sensors. The circuit layout is optimised, in terms of silicon area, to fully exploit the capability of an AT&T flip-chip technique by which the quantum well sensors are directly bonded to the last metal layer of an integrated circuit. The particular circuit topology achieves a high output swing and good noise behaviour, which allow a 70 dB dynamic range. This amplifier can be provided with peaking and or offset trimming circuits
Keywords :
CMOS analogue integrated circuits; feedback amplifiers; flip-chip devices; hybrid integrated circuits; integrated circuit noise; integrated optoelectronics; photodetectors; preamplifiers; semiconductor diodes; semiconductor quantum wells; QW diodes; electro-optic quantum well sensors; flip-chip technique; front end preamplifier; high dynamic CMOS preamplifiers; integrated circuit; noise behaviour; transimpedance amplifier; trimming circuits;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980587
