Title :
1.3 μm GaInAsP lasers integrated with butt-coupled waveguide and high reflective semiconductor/air Bragg reflector (SABAR)
Author :
Mukaihara, T. ; Yamanaka, N. ; Iwai, N. ; Ishikawa, T. ; Kasukawa, A.
Author_Institution :
R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
fDate :
4/30/1998 12:00:00 AM
Abstract :
The authors have demonstrated a novel 1.3 μm integrated GaInAsP lasers with a butt-coupled waveguide and semiconductor/air Bragg reflector (SABAR). The butt-coupled interface of the integrated laser is very good and the estimated coupling efficiency is almost unity. The obtained reflectivity of the proposed SABAR is 90%, and is in good agreement with the calculated value
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser cavity resonators; laser transitions; semiconductor lasers; waveguide lasers; 1.3 micron; GaInAsP; butt-coupled waveguide; integrated GaInAsP lasers; reflectivity; semiconductor/air Bragg reflector;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980663
