Title :
High-power InGaAs-GaAs-AlGaAs distributed feedback lasers with nonabsorbing mirrors
Author :
Lammert, R.M. ; Ungar, J.E. ; Oh, S.W. ; Qi, H. ; Chen, J.S.
Author_Institution :
Ortel Corp., Alhambra, CA, USA
fDate :
4/30/1998 12:00:00 AM
Abstract :
High power InGaAs-GaAs distributed feedback (DFB) lasers with nonabsorbing mirrors have been fabricated with over 200 mW of single frequency CW optical power at 25°C (110 mW at 95°C). Unlike their distributed Bragg reflector counterparts, the DFB devices exhibit relatively linear optical power against current curves. Low threshold currents of ~10 mA were also obtained
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; semiconductor lasers; 10 mA; 110 to 200 mW; 25 to 95 C; InGaAs-GaAs-AlGaAs; distributed feedback lasers; high-power DFB lasers; low threshold currents; nonabsorbing mirrors; semiconductor lasers; single frequency CW optical power;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980638
