DocumentCode
1391287
Title
High-power InGaAs-GaAs-AlGaAs distributed feedback lasers with nonabsorbing mirrors
Author
Lammert, R.M. ; Ungar, J.E. ; Oh, S.W. ; Qi, H. ; Chen, J.S.
Author_Institution
Ortel Corp., Alhambra, CA, USA
Volume
34
Issue
9
fYear
1998
fDate
4/30/1998 12:00:00 AM
Firstpage
886
Lastpage
887
Abstract
High power InGaAs-GaAs distributed feedback (DFB) lasers with nonabsorbing mirrors have been fabricated with over 200 mW of single frequency CW optical power at 25°C (110 mW at 95°C). Unlike their distributed Bragg reflector counterparts, the DFB devices exhibit relatively linear optical power against current curves. Low threshold currents of ~10 mA were also obtained
Keywords
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; semiconductor lasers; 10 mA; 110 to 200 mW; 25 to 95 C; InGaAs-GaAs-AlGaAs; distributed feedback lasers; high-power DFB lasers; low threshold currents; nonabsorbing mirrors; semiconductor lasers; single frequency CW optical power;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980638
Filename
682831
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