Title :
Planar homoepitaxial laser diodes grown on aluminium-doped ZnSe substrates
Author :
Wenisch, H. ; Ohkawa, K. ; Isemann, A. ; Fehrer, M. ; Hommel, D.
Author_Institution :
Inst. fur Festkorperphys., Bremen Univ., Germany
fDate :
4/30/1998 12:00:00 AM
Abstract :
Stable room temperature operation of planar green laser diodes at 512 nm was achieved on ZnSe substrates, which are conductive in the first 200 μm from the top due to post-growth aluminium doping. The threshold current density is 900-1000 A/cm2 and the operating voltage is ~14 V. The lifetime in pulsed operation exceeds 1 h
Keywords :
II-VI semiconductors; aluminium; cadmium compounds; current density; laser stability; laser transitions; quantum well lasers; substrates; zinc compounds; 1 hour; 14 V; Al-doped ZnSe substrates; CdZnSe-ZnSe; ZnSe based LDs; ZnSe:Al; green laser diodes; planar homoepitaxial laser diodes; post-growth aluminium doping; pulsed operation lifetime; stable room temperature operation; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980669
