DocumentCode :
1391316
Title :
Reset Current Scaling in Phase-Change Memory Cells: Modeling and Experiments
Author :
Bergonzoni, Carlo ; Borghi, Massimo ; Palumbo, Elisabetta
Author_Institution :
STMicroelectron., Agrate Brianza, Italy
Volume :
59
Issue :
2
fYear :
2012
Firstpage :
283
Lastpage :
291
Abstract :
The operation of a phase-change memory cell is studied, with special regard to programming performance, by means of analytical and TCAD numerical modeling and experimental characterization. Dependence of the reset current on geometrical properties of the heater element is analyzed through the study of heat flux from the heater element to the phase-change material. A simple electrothermal analytical model is implemented, which allows the prediction of the cell reset current value as a function of heater geometrical parameters. Analytical predictions are compared with good agreement to extensive experimental measurements. The effects of power dissipation are studied, showing that cell power efficiency strongly depends on its geometrical properties.
Keywords :
phase change materials; phase change memories; technology CAD (electronics); TCAD; geometrical properties; heat flux; heater element; phase change material; phase change memory cells; programming performance; reset current scaling; Computer architecture; Geometry; Heat sinks; Materials; Mathematical model; Resistance heating; Device scaling; modeling; nonvolatile memory devices; phase-change memory (PCM);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2011.2175736
Filename :
6096394
Link To Document :
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