• DocumentCode
    1391417
  • Title

    Improved gain SiGe multiquantum well infra-red detector

  • Author

    Herbert, D.C.

  • Author_Institution
    DERA Electron. Sector, Malvern, UK
  • Volume
    34
  • Issue
    9
  • fYear
    1998
  • fDate
    4/30/1998 12:00:00 AM
  • Firstpage
    912
  • Lastpage
    913
  • Abstract
    Calculations of self-consistent band structure for SiGe multiquantum well (MQW) systems suggest that grading the wells and counter doping can lead to large increases in photoconductive gain
  • Keywords
    Ge-Si alloys; infrared detectors; photoconducting devices; semiconductor materials; semiconductor quantum wells; SiGe; SiGe multiquantum well infrared detector; counter doping; grading; photoconductive gain; self-consistent band structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980677
  • Filename
    682855
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1391417