Title :
Intersubband transitions in InGaAs/AlAs coupled double quantum well structures for multi-wavelength all-optical switching
Author :
Yoshida, H. ; Mozume, T. ; Nishimura, T. ; Wada, O.
Author_Institution :
FESTA Labs., Femtosecond Technol. Res. Assoc., Ibaraki, Japan
fDate :
4/30/1998 12:00:00 AM
Abstract :
A coupled double quantum well (C-DQW) structure enabling ultrafast, multi-wavelength, all-optical modulation using intersubband transitions is proposed. It has been shown from the calculation of absorption spectrum and relaxation characteristics that an InGaAs/AlAs C-DQW structure is desirable for application to all-optical switches for multi-wavelength operation at near-infrared wavelengths down to 1.5 μm
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical switches; semiconductor quantum wells; 1.5 micron; InGaAs-AlAs; InGaAs/AlAs coupled double quantum well; absorption spectrum; intersubband transition; multi-wavelength all-optical switching; near-infrared wavelength; relaxation; ultrafast modulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980605
