Title :
Barrier height changes in amorphous silicon Schottky diodes following dopant implantation
Author :
Chai, M.K. ; Shannon, J.M. ; Sealy, B.J.
Author_Institution :
Sch. of Electron. Eng., Inf. Technol. & Math., Surrey Univ., Guildford, UK
fDate :
4/30/1998 12:00:00 AM
Abstract :
The effective barrier heights of Schottky diodes on hydrogenated amorphous silicon have been varied over a wide range using ion implantation of the common dopants. For small changes in barrier height, damage effects are negligible and dopant activity is high, leading to minimal changes in ideality factors and leakage currents
Keywords :
Schottky diodes; amorphous semiconductors; elemental semiconductors; ion implantation; silicon; Schottky diode; Si:H; barrier height; damage; dopant activity; hydrogenated amorphous silicon; ideality factor; ion implantation; leakage current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980641
