DocumentCode
1391465
Title
High power RF operation of AlGaN/GaN HEMTs grown on insulating silicon carbide substrates
Author
Sullivan, G.J. ; Higgins, J.A. ; Chen, M.Y. ; Yang, J.W. ; Chen, Q. ; Pierson, R.L. ; McDermott, B.T.
Author_Institution
Rockwell Sci. Center, Thousand Oaks, CA, USA
Volume
34
Issue
9
fYear
1998
fDate
4/30/1998 12:00:00 AM
Firstpage
922
Lastpage
924
Abstract
Excellent RF performance is reported for AlGaN HEMTs fabricated on electrically insulating SiC substrates. The transistors have an fmax≈42 GHz, and an fT≈15 GHz. At 10 GHz, 320 μm wide transistors had a total power of 900 mW with a gain of 6.5 dB, which corresponds to a power density of 2.8 W/mm
Keywords
III-VI semiconductors; aluminium compounds; gallium compounds; power HEMT; wide band gap semiconductors; 10 to 42 GHz; 6.5 dB; 900 mW; AlGaN-GaN; AlGaN/GaN HEMT; SiC; electrically insulating silicon carbide substrate; high power RF transistor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980601
Filename
682862
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