Title :
Surface flashover effects in AlGaN/GaN HFETs
Author :
Sudarshan, T.S. ; Gradinaru, G. ; Yang, J. ; Khan, M.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA
fDate :
4/30/1998 12:00:00 AM
Abstract :
Experimental evidence of surface flashover in AlGaN/GaN heterojunction field effect transistors is presented. A practical and unambiguous way of identifying device failure by flashover is proposed. Surface flashover is the main mechanism initiating premature breakdown in these devices leading to a significant reduction of their power capability
Keywords :
III-V semiconductors; aluminium compounds; flashover; gallium compounds; junction gate field effect transistors; AlGaN-GaN; AlGaN/GaN HFET; breakdown; device failure; heterojunction field effect transistor; surface flashover;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980648
