Title :
Dual bridge 6 Gsample/s track and hold circuit in AlGaAs/GaAs/AlGaAs HEMT technology
Author :
Bushehri, E. ; Thiede, A. ; Staroselsky, V. ; Timochenkov, V. ; Lienhart, H. ; Bratov, V. ; Jakobus, T.
Author_Institution :
Microelectron. Centre, Middlesex Polytech., London, UK
fDate :
5/14/1998 12:00:00 AM
Abstract :
A T&H circuit with a sampling rate of 6 Gsample/s has been experimentally demonstrated in AlGaAs/GaAs/AlGaAs HEMT technology. The circuit utilises a dual bridge topology suitable for interleaved ADC circuits, doubling the effective sampling rate with an insignificant increase in area compared to the previously reported solutions
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; analogue-digital conversion; bridge circuits; field effect analogue integrated circuits; gallium arsenide; sample and hold circuits; signal sampling; AlGaAs-GaAs-AlGaAs; HEMT technology; T&H circuit; dual bridge topology; interleaved ADC circuits; sampling rate; track/hold circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980692
