DocumentCode :
1391665
Title :
A novel 7 Gbps low-power CMOS ultra-wideband pulse generator
Author :
Arafat, M.A. ; Harun-Ur-Rashid, A.B.M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Volume :
6
Issue :
6
fYear :
2012
Firstpage :
406
Lastpage :
412
Abstract :
In this study, a novel low-power high data rate ultra-wideband (UWB) pulse generator circuit is presented, which can be fully integrated in complementary metal oxide semiconductor (CMOS) process. The basic part of the circuit generates a UWB Gaussian monocycle pulse using the triangular pulse generation technique. A new bipolar phase shift keying pulse modulator is designed to control the polarity of the output pulses. The design includes additional functionality to make the pulse generator also applicable for transmitted reference (TR) signalling system. The circuit can generate pulses at a maximum rate of 7 giga pulse per second (Gpps) without TR pulse (TRP) and 3.5 Gpps with TRP. The generated pulses are symmetrical, each having a width of 142 ps and a peak-to-peak swing of 500 mV. The 3 dB bandwidth of the pulse spectrum is 9 GHz. The pulse generator consumes only 1.13 pJ per pulse from 1.2 V supply. The circuit is designed and simulated in 90 nm CMOS technology.
Keywords :
CMOS integrated circuits; Gaussian processes; low-power electronics; phase shift keying; pulse generators; pulse modulation; ultra wideband communication; UWB Gaussian monocycle pulse; bipolar phase shift keying pulse modulator design; bit rate 7 Gbit/s; complementary metal oxide semiconductor; frequency 9 GHz; low-power CMOS ultra-wideband pulse generator; size 90 nm; transmitted reference signalling system; triangular pulse generation technique; voltage 1.2 V;
fLanguage :
English
Journal_Title :
Circuits, Devices & Systems, IET
Publisher :
iet
ISSN :
1751-858X
Type :
jour
DOI :
10.1049/iet-cds.2012.0057
Filename :
6397094
Link To Document :
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