Title :
W/WSi gate self-aligned HIFETs (heterointerface FETs) using an AlInAs/GaInAs heterostructure grown by MOCVD
Author :
Kamada, Masaru ; Ishikawa, Hiroshi ; Kaneko, Kunihiko ; Watanabe, N.
Author_Institution :
Sony Corp. Res. Center, Yokohama
fDate :
3/3/1988 12:00:00 AM
Abstract :
An undoped AlInAs/GaInAs heterostructure was grown by MOCVD and a W/WSi gate self-aligned HIFET (heterointerface FET) structure was made by ion implantation and rapid thermal annealing. The HIFET, 5 μm in gate length, was of an enhancement-type with a threshold voltage of about 0 V and with a transconductance of 280 mS/mm at room temperature. This result confirms the very high potential of this device for direct coupled FET logic (DCFL)
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; indium compounds; integrated logic circuits; ion implantation; semiconductor growth; vapour phase epitaxial growth; 280 mS; 5 micron; AlInAs/GaInAs heterostructure; DCFL; III-V semiconductors; MOCVD; W-WSi-AlInAs-GaInAs; W/WSi gate; direct coupled FET logic; enhancement-type; epitaxial growth; gate length; heterointerface FETs; ion implantation; rapid thermal annealing; self-aligned HIFETs;
Journal_Title :
Electronics Letters
