DocumentCode
1391742
Title
Impact of light illumination and passivation layer on silicon finite-ground coplanar-waveguide transmission-line properties
Author
Spiegel, Solon J. ; Madjar, Asher
Author_Institution
Intel Cellular Commun. Div., Digital Signal Processing Commun., Givat Shmuel, Israel
Volume
48
Issue
10
fYear
2000
fDate
10/1/2000 12:00:00 AM
Firstpage
1673
Lastpage
1679
Abstract
The modeling of silicon finite-ground coplanar-waveguide (FGCPW) transmission lines is presented in this paper. It is shown that the effective substrate conductivity increases in the presence of illumination and in the presence of a passivation layer in the slot regions independently. As a result, the losses of trenched FGCPW are lower than conventional FGCPW transmission lines. The strong dependence of the substrate conductivity on illumination suggests that optically controlled attenuators can be implemented with FGCPW transmission lines exhibiting practically no phase change between the different attenuation states. A new contrast ratio for optically controlled transmission lines is derived
Keywords
coplanar waveguides; earthing; electrical conductivity; elemental semiconductors; losses; microwave photonics; optical control; passivation; silicon; transmission line theory; waveguide attenuators; Si; Si CPW transmission-line properties; contrast ratio; coplanar-waveguide transmission-line properties; effective substrate conductivity; finite-ground CPW transmission-line properties; light illumination; losses; optically controlled attenuators; optically controlled transmission lines; passivation layer; slot regions; transmission line modelling; trenched finite ground CPW; Conductivity; Coplanar transmission lines; Lighting; Optical attenuators; Optical control; Optical losses; Passivation; Propagation losses; Silicon; Transmission lines;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.873894
Filename
873894
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