DocumentCode
1391775
Title
An 1800 V 300 A nondestructive tester for bipolar power transistors
Author
Carpenter, Grant ; Lee, Fred C Y ; Chen, Dan Y.
Author_Institution
Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Volume
5
Issue
3
fYear
1990
fDate
7/1/1990 12:00:00 AM
Firstpage
314
Lastpage
322
Abstract
A nondestructive reverse-bias safe operating area (RBSOA) tester using an ultra-fast shunt circuit is constructed and demonstrated up to an 1800 V 300 A level. An innovative MOSFET shunt circuit is the key to the high power capability of the tester. The tester is an upgraded version of the old tester (rated at 1000 V 120 A) reported by the authors in 1985. The basic operation of the tester is reviewed, the design and the fabrication of the new tester are described, and test results are provided
Keywords
bipolar transistors; nondestructive testing; power transistors; test equipment; 1800 V; 300 A; RBSOA; bipolar power transistor testing; nondestructive tester; reverse-bias safe operating area; ultra-fast shunt circuit; Breakdown voltage; Capacitors; Circuit testing; Electric breakdown; Fabrication; MOSFET circuits; Nondestructive testing; Power transistors; Shunt (electrical); Switches;
fLanguage
English
Journal_Title
Power Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0885-8993
Type
jour
DOI
10.1109/63.56522
Filename
56522
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