DocumentCode :
1391804
Title :
635 nm 20 mW DFB laser
Author :
Pezeshki, B. ; Zelinski, M. ; Agrawal, V.
Author_Institution :
SDI Inc., San Jose, CA, USA
Volume :
34
Issue :
10
fYear :
1998
fDate :
5/14/1998 12:00:00 AM
Firstpage :
987
Lastpage :
988
Abstract :
The shortest wavelength room temperature operation in an electrically pumped DFB laser is demonstrated. The InGaAlP device emits up to 20 mW in a single spatial and longitudinal mode under CW conditions. Such lasers can substitute for bulky He-Ne gas lasers for meteorological and spectroscopic applications
Keywords :
III-V semiconductors; distributed feedback lasers; gallium compounds; indium compounds; laser modes; semiconductor lasers; 20 mW; 635 nm; CW conditions; DFB laser; III-V semiconductors; InGaAlP; electrical pumping; longitudinal mode; meteorological applications; shortest wavelength room temperature operation; spatial mode; spectroscopic applications;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19980729
Filename :
682971
Link To Document :
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